C10M Series | 2 MHz (GaN-optimized) ICS

The C10M is a high-performance, fully integrated Hall-effect current sensor employing a differential architecture to effectively suppress external common-mode magnetic interference. It provides a pair of differential outputs (OUT and REF) to maximize the signal-to-noise ratio (SNR) in noisy environments, while integrated temperature and stress compensation ensures high accuracy over a temperature range of -40°C to +125°C, and feature a FAULT overcurrent detection with an externally adjustable overcurrent threshold, saving the cost of additional board-level comparators.

The C10M features a 2 MHz (3dB) bandwidth, 5 kVrms isolation, and an ultra-low 200 μΩ primary resistance, optimized for the high-frequency, fast switching requirements of SiC and GaN-based power electronics. It provides a robust and efficient solution for next-generation high-density electric vehicle chargers, photovoltaic inverters, and precision motor control.