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C08M Series | 2 MHz (GaN-optimized) Integrated Current Sensor

C08M Series | 2 MHz (GaN-optimized) Integrated Current Sensor

The C08M is a high-performance, fully integrated Hall-effect current sensor employing a differential architecture to effectively suppress external common-mode magnetic interference. It provides a pair of
differential outputs (OUT and REF) to maximize the signal-to-noise ratio (SNR) in noisy environments, while integrated temperature and stress compensation ensures high accuracy over a temperature range of
-40°C to +125°C.


The C08M features a 2 MHz (3dB) bandwidth, 3 kVrms isolation, and an ultra-low 750 μΩ primary resistance, optimized for the high-frequency, fast switching requirements of SiC and GaN-based power electronics. It provides a robust and efficient solution for next-generation high-density electric vehicle chargers, photovoltaic inverters, and precision motor control.

Feature:

  • Factory trimmed sensitivity sensor
  • Superior temperature stability and linearity
  • SOIC8 SMT mounting
  • Fast response 0.2μs, minimal noise output
  • Ultra-high bandwidth of 2MHz (-3dB)
  • Compact size for applications with limited space
  • RoHs compliance (Lead-Free)

 

Suitable for the following

  • Motor control
  • Solar inverter
  • Smart battery junction boxes
  • Industrial power supply
  • DCDC
  • Charging pile
     
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